PART |
Description |
Maker |
MCM69R738CZP4.4R MCM69R820CZP4.4R MCM69R738CZP4R M |
4M Late Write 2.5 V I/O
|
Motorola, Inc
|
MCM69R736A MCM69R736AZP5 MCM69R736AZP5R MCM69R736A |
4M LATE WRITE HSTL
|
MOTOROLA[Motorola Inc] Motorola, Inc
|
MCM63L836A |
8M Late Write HSTL From old datasheet system
|
Motorola
|
MCM69R737AZP7 MCM69R737AZP6R MCM69R737AZP5R MCM69R |
From old datasheet system 4M Late Write LVTTL
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
K7Z167285A |
256Kx72 Double Late Write SigmaRAMData Sheet
|
Samsung Electronic
|
GS8170LW36AGC-250 GS8170LW36AC-350 GS8170LW36AC-35 |
18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI[GSI Technology]
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
|
Sony, Corp.
|
HM64YGB36100-15 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|
GS8170DW72AC-300I GS8170DW36AC-300I GS8170DW36AC-2 |
512K X 36 STANDARD SRAM, 1.6 ns, PBGA209 18Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI Technology
|
MCM63R818FC3.7R |
256K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
|
Freescale Semiconductor, Inc.
|
CY7C1332AV25 CY7C1332AV25-200BGC CY7C1332AV25-200B |
18-Mbit (512K x 36/1Mbit x 18) Pipelined Register-Register Late Write
|
http:// Cypress Semiconductor
|